Etching is the process of selectively removing mask patterned materials from the wafer’s surface to create desired patterns on the wafer’s surface. Plasma etch is the use of a radio frequency (RF) excited plasma to produce chemically reactive species from various gases. The reactive plasma is exposed to the wafer surface and etches away the material not protected by a masking layer.
Our plasma etch products are built on our high-throughput platform to provide high overall equipment efficiency. Our plasma etch products feature proprietary Faraday shielded inductively coupled plasma (ICP) source combined with etch bias control.