RTP refers to a process that heats silicon wafers to high temperatures (up to 1200°C or greater) using high intensity lamps to set the electrical properties of the semiconductor devices.
Our thermal products now include a wide range of rapid anneals ranging from soak to spike to millisecond flash.
Our Helios family RTP systems offer unique double-side heating RTP technology. It can achieve the highest wafer temperature ramp rate while balancing wafer frontside and backside temperatures, eliminate pattern-loading effect, provide unique wafer stress management capabilities, satisfy technical requirements for RTP processes with different substrate thickness and device structures, and achieve the highest system productivity at the same time.
The Helios XP features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios XP can fully satisfy technical requirements in manufacturing of different semiconductor devices across various technology nodes (130 nm to 5 nm and below). The Helios XP has also demonstrated high reliability, long mean-time-between-clean, and more than 20 to 30% benefit in overall cost of ownership in mass production. It is the ideal RTP system for advanced semiconductor development and manufacturing.
The Helios C200 features an advanced temperature measurement and control system combined with an active compensation algorithm for different wafer emissivities. The Helios C200 RTP system combines superior technical performance with outstanding tool reliability. It is the ideal RTP solution for 200 mm semiconductor development and manufacturing.